Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...
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| Главные авторы: |
Tarala, V. A.,
Тарала, В. А.,
Altakhov, A. S.,
Алтахов, А. С.,
Ambartsumov, M. G.,
Амбарцумов, М. Г.,
Martens, V. Y.,
Мартенс, В. Я.,
Shevchenko, M. Y.,
Шевченко, М. Ю. |
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| 格式: | Статья
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| 語言: | English |
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| 出版: |
Institute of Electrical and Electronics Engineers Inc.
2018
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| 主題: | |
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| 在線閱讀: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3039
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