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Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

عرض إصدارات أخرى (1)

Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Ambartsumov, M. G., Амбарцумов, М. Г., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
التنسيق: Статья
اللغة:English
منشور في: Institute of Electrical and Electronics Engineers Inc. 2018
الموضوعات:
Aluminum coatings
Atomic layer deposition
Epitaxial growth
Refractive index
Oxide films
Aluminum nitride
الوصول للمادة أونلاين:https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3039
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الانترنت

https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3039

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