Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exp...

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Egile Nagusiak:	Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Ambartsumov, M. G., Амбарцумов, М. Г., Martens, V. Y., Мартенс, В. Я.
Formatua:	Статья
Hizkuntza:	English
Argitaratua:	Maik Nauka-Interperiodica Publishing 2018
Gaiak:	Atomic layer deposition Sapphire substrates
Sarrera elektronikoa:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3072
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spelling	oai:10.200.131.19:20.500.12258-30722018-09-25T14:40:03Z Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Atomic layer deposition Sapphire substrates The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec 2018-09-25T14:39:38Z 2018-09-25T14:39:38Z 2017 Статья Tarala, V.A., Altakhov, A.S., Ambartsumov, M.G., Martens, V.Y. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition // Technical Physics Letters. - 2017. - Volume 43. - Issue 1. - Pages 74-77 https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm= http://hdl.handle.net/20.500.12258/3072 en Technical Physics Letters application/pdf application/pdf Maik Nauka-Interperiodica Publishing
institution	СКФУ
collection	Репозиторий
language	English
topic	Atomic layer deposition Sapphire substrates
spellingShingle	Atomic layer deposition Sapphire substrates Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
description	The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec
format	Статья
author	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я.
author_facet	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я.
author_sort	Tarala, V. A.
title	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
title_short	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
title_full	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
title_fullStr	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
title_full_unstemmed	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
title_sort	growing oriented aln films on sapphire substrates by plasma-enhanced atomic layer deposition
publisher	Maik Nauka-Interperiodica Publishing
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3072
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Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

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