Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exp...
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| Главные авторы: |
Tarala, V. A.,
Тарала, В. А.,
Altakhov, A. S.,
Алтахов, А. С.,
Ambartsumov, M. G.,
Амбарцумов, М. Г.,
Martens, V. Y.,
Мартенс, В. Я. |
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| 格式: | Статья
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| 语言: | English |
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| 出版: |
Maik Nauka-Interperiodica Publishing
2018
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| 主题: | |
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| 在线阅读: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3072
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