Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exp...
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| Päätekijät: | , , , , , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
Maik Nauka-Interperiodica Publishing
2018
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| Linkit: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3072 |
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85013339740&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=08dccdde8616d2d2d58999ab85e59422&sot=aff&sdt=sisr&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&ref=%28Growing+oriented+AlN+films+on+sapphire+substrates+by+plasma-enhanced+atomic+layer+deposition%29&relpos=0&citeCnt=2&searchTerm=https://dspace.ncfu.ru/handle/20.500.12258/3072