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EFFECT OF BISMUTH CONTENT ON THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GaAs1-yBiy: FIRST PRINCIPLES CALCULATIONS

A theoretical study of the effect of bismuth concentration on the structural and electronic properties of the GaAs1-yBiy solid solution is presented using the density functional theory in the VASP 5.4.4 software package. The results of the study showed that the fundamental band gap GaAs1-yBiy increa...

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Главные авторы: Devitsky, O. V., Девицкий, О. В.
Formato: Статья
Idioma:Russian
Publicado em: 2024
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Acesso em linha:https://dspace.ncfu.ru/handle/123456789/27119
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