Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

Disgrifiad llawn

Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Prif Awduron:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
Fformat:	Статья
Iaith:	English
Cyhoeddwyd:	Elsevier Ltd 2024
Pynciau:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
Mynediad Ar-lein:	https://dspace.ncfu.ru/handle/123456789/28667
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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