Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | Статья |
| Lenguaje: | English |
| Publicado: |
Elsevier Ltd
2024
|
| Materias: | |
| Acceso en línea: | https://dspace.ncfu.ru/handle/123456789/28667 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
