Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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Bibliografiset tiedot
Päätekijät:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
Aineistotyyppi:	Статья
Kieli:	English
Julkaistu:	Elsevier Ltd 2024
Aiheet:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
Linkit:	https://dspace.ncfu.ru/handle/123456789/28667
Tagit:	Lisää tagi Ei tageja, Lisää ensimmäinen tagi!

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