Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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ग्रंथसूची विवरण
मुख्य लेखकों:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
स्वरूप:	Статья
भाषा:	English
प्रकाशित:	Elsevier Ltd 2024
विषय:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
ऑनलाइन पहुंच:	https://dspace.ncfu.ru/handle/123456789/28667
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