Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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書誌詳細
主要な著者:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
フォーマット:	Статья
言語:	English
出版事項:	Elsevier Ltd 2024
主題:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
オンライン･アクセス:	https://dspace.ncfu.ru/handle/123456789/28667
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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