Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...
Na minha lista:
| Главные авторы: | , , , |
|---|---|
| Formato: | Статья |
| Idioma: | English |
| Publicado em: |
Elsevier Ltd
2024
|
| Assuntos: | |
| Acesso em linha: | https://dspace.ncfu.ru/handle/123456789/28667 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|
