Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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Библиографические подробности
Главные авторы:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
Формат:	Статья
Язык:	English
Опубликовано:	Elsevier Ltd 2024
Темы:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
Online-ссылка:	https://dspace.ncfu.ru/handle/123456789/28667
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

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