Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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Bibliografske podrobnosti
Главные авторы:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
Format:	Статья
Jezik:	English
Izdano:	Elsevier Ltd 2024
Teme:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
Online dostop:	https://dspace.ncfu.ru/handle/123456789/28667
Oznake:	Označite Brez oznak, prvi označite!

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