Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition

It is well established that the performance of LED and laser devices can be enhanced by optimizing the heat sink. Aluminum oxide (Al2O3) is one of the most effective materials for use as a heat sink. In this study, YAG: Ce3+ thin films were deposited onto sapphire substrates with a (0001) orientatio...

Полное описание

Сохранить в:

Библиографические подробности
Главные авторы:	Devitsky, O. V., Девицкий, О. В., Kravtsov, A. A., Кравцов, А. А.
Формат:	Статья
Язык:	English
Опубликовано:	Elsevier Ltd 2025
Темы:	Annealing Thin films Photoluminescence Ce Pulsed laser deposition YAG X-ray diffraction
Online-ссылка:	https://dspace.ncfu.ru/handle/123456789/29814
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

id	ir-123456789-29814
record_format	dspace
spelling	ir-123456789-298142025-02-20T13:34:58Z Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Annealing Thin films Photoluminescence Ce Pulsed laser deposition YAG X-ray diffraction It is well established that the performance of LED and laser devices can be enhanced by optimizing the heat sink. Aluminum oxide (Al2O3) is one of the most effective materials for use as a heat sink. In this study, YAG: Ce3+ thin films were deposited onto sapphire substrates with a (0001) orientation using pulsed laser deposition method. It was observed that the annealing temperature did not significantly affect the thickness of the films, but it did influence their uniformity and structure. As the annealing temperature of the YAG: Ce films increased, crystallite growth was noted. The polydispersity of the grains also increased with higher annealing temperatures, indicating competitive growth phenomena. Raising the annealing temperature to 1400 °C led to the formation of gaps in the film structure due to recrystallization processes. Luminescence measurements revealed that, despite the structural differences among films annealed at various temperatures, their emission spectra remained consistent with the target. This suggests the stability of the energy structure of YAG: Ce and the successful transfer of YAG stoichiometry during the pulsed laser deposition process. As a result, optimal conditions for the thermal annealing of YAG: Ce thin films were identified, leading to high crystalline perfection and the formation of a heteroepitaxial interface with the Al2O3 (0001) substrate. This finding is potentially significant for enhancing the thermal characteristics of composite structures. 2025-02-20T13:34:09Z 2025-02-20T13:34:09Z 2025 Статья Devitsky O.V., Kravtsov A.A. Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition // Ceramics International. - 2025. - 51 (5). - pp. 6011 - 6022. - DOI: 10.1016/j.ceramint.2024.12.047 https://dspace.ncfu.ru/handle/123456789/29814 en Ceramics International application/pdf application/pdf Elsevier Ltd
institution	СКФУ
collection	Репозиторий
language	English
topic	Annealing Thin films Photoluminescence Ce Pulsed laser deposition YAG X-ray diffraction
spellingShingle	Annealing Thin films Photoluminescence Ce Pulsed laser deposition YAG X-ray diffraction Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
description	It is well established that the performance of LED and laser devices can be enhanced by optimizing the heat sink. Aluminum oxide (Al2O3) is one of the most effective materials for use as a heat sink. In this study, YAG: Ce3+ thin films were deposited onto sapphire substrates with a (0001) orientation using pulsed laser deposition method. It was observed that the annealing temperature did not significantly affect the thickness of the films, but it did influence their uniformity and structure. As the annealing temperature of the YAG: Ce films increased, crystallite growth was noted. The polydispersity of the grains also increased with higher annealing temperatures, indicating competitive growth phenomena. Raising the annealing temperature to 1400 °C led to the formation of gaps in the film structure due to recrystallization processes. Luminescence measurements revealed that, despite the structural differences among films annealed at various temperatures, their emission spectra remained consistent with the target. This suggests the stability of the energy structure of YAG: Ce and the successful transfer of YAG stoichiometry during the pulsed laser deposition process. As a result, optimal conditions for the thermal annealing of YAG: Ce thin films were identified, leading to high crystalline perfection and the formation of a heteroepitaxial interface with the Al2O3 (0001) substrate. This finding is potentially significant for enhancing the thermal characteristics of composite structures.
format	Статья
author	Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А.
author_facet	Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А.
author_sort	Devitsky, O. V.
title	Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
title_short	Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
title_full	Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
title_fullStr	Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
title_full_unstemmed	Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition
title_sort	effect of thermal annealing on the structural evolution of thin ceramic yag: ce films grown by pulsed laser deposition
publisher	Elsevier Ltd
publishDate	2025
url	https://dspace.ncfu.ru/handle/123456789/29814
work_keys_str_mv	AT devitskyov effectofthermalannealingonthestructuralevolutionofthinceramicyagcefilmsgrownbypulsedlaserdeposition AT devickijov effectofthermalannealingonthestructuralevolutionofthinceramicyagcefilmsgrownbypulsedlaserdeposition AT kravtsovaa effectofthermalannealingonthestructuralevolutionofthinceramicyagcefilmsgrownbypulsedlaserdeposition AT kravcovaa effectofthermalannealingonthestructuralevolutionofthinceramicyagcefilmsgrownbypulsedlaserdeposition
_version_	1842245721443532800

Effect of thermal annealing on the structural evolution of thin ceramic YAG: Ce films grown by pulsed laser deposition

Схожие документы