Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. T...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , , , , , , , |
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| التنسيق: | Статья |
| اللغة: | English |
| منشور في: |
Institute of Physics Publishing
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11217 |
| الوسوم: |
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| الملخص: | The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor |
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