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Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctions

Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctions

The Schottky barrier heights in the М/n-(SiC)1–x(AlN)x systems are obtained on the assumption of a high density of surface states in the region of the metal (M) – SiC–AlN-solid solution contact. Current–voltage (I–V) characteristics of the Al/n-(SiC)1–x(AlN)x diodes are calculated. It is shown that...

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Bibliografische gegevens
Hoofdauteurs: Altukhov, V. I., Алтухов, В. И., Sankin, A. V., Санкин, А. В., Antonov, V. F., Антонов, В. Ф., Filipova, S. V., Филипова, С. В., Mitjugova, O. A., Митюгова, О. А.
Formaat: Статья
Taal:English
Gepubliceerd in: Springer 2020
Onderwerpen:
Composite model
Emission currents
I–V characteristics of diodes
Schottky barrier
SiC solid solutions
Online toegang:https://www.scopus.com/record/display.uri?eid=2-s2.0-85078030812&origin=resultslist&sort=plf-f&src=s&st1=Schotky+Barrier+Height+and+Calculation+of+Voltage&st2=&sid=1a92a68aaccc6341e8b7d4db7f649cec&sot=b&sdt=b&sl=64&s=TITLE-ABS-KEY%28Schotky+Barrier+Height+and+Calculation+of+Voltage%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/11281
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85078030812&origin=resultslist&sort=plf-f&src=s&st1=Schotky+Barrier+Height+and+Calculation+of+Voltage&st2=&sid=1a92a68aaccc6341e8b7d4db7f649cec&sot=b&sdt=b&sl=64&s=TITLE-ABS-KEY%28Schotky+Barrier+Height+and+Calculation+of+Voltage%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/11281

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