Ion-beam deposition of thin AlN films on Al2O3 substrate
Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture com...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Статья |
| Jazyk: | English |
| Vydáno: |
MAIK NAUKA/INTERPERIODICA/SPRINGER
2020
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| On-line přístup: | http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1 https://dspace.ncfu.ru/handle/20.500.12258/11480 |
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| Shrnutí: | Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire |
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