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Ion-beam deposition of thin AlN films on Al2O3 substrate

Ion-beam deposition of thin AlN films on Al2O3 substrate

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture com...

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मुख्य लेखकों: Devitsky, O. V., Девицкий, О. В., Sysoev, I. A., Сысоев, И. А., Kasyanov, I. V., Касьянов, И. В., Nikulin, D. A., Никулин, Д. А.
स्वरूप: Статья
भाषा:English
प्रकाशित: MAIK NAUKA/INTERPERIODICA/SPRINGER 2020
विषय:
Ion-beam deposition
Gallium nitride
Sapphire
Aluminum nitride
Wide-bandgap semiconductors
ऑनलाइन पहुंच:http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/11480
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id ir-20.500.12258-11480
record_format dspace
spelling ir-20.500.12258-114802022-01-10T14:05:34Z Ion-beam deposition of thin AlN films on Al2O3 substrate Devitsky, O. V. Девицкий, О. В. Sysoev, I. A. Сысоев, И. А. Kasyanov, I. V. Касьянов, И. В. Nikulin, D. A. Никулин, Д. А. Ion-beam deposition Gallium nitride Sapphire Aluminum nitride Wide-bandgap semiconductors Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire 2020-02-21T08:48:50Z 2020-02-21T08:48:50Z 2019 Статья Lunin, LS; Devitskii, OV; Sysoev, IA; Pashchenko, AS; Kas'yanov, IV; Nikulin, DA; Irkha, VA. Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate // TECHNICAL PHYSICS LETTERS. - 2019. - Том: 45. - Выпуск: 12. - Стр.: 1237-1240 http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1 http://hdl.handle.net/20.500.12258/11480 en Technical Physics Letters application/pdf application/pdf MAIK NAUKA/INTERPERIODICA/SPRINGER
institution СКФУ
collection Репозиторий
language English
topic Ion-beam deposition
Gallium nitride
Sapphire
Aluminum nitride
Wide-bandgap semiconductors
spellingShingle Ion-beam deposition
Gallium nitride
Sapphire
Aluminum nitride
Wide-bandgap semiconductors
Devitsky, O. V.
Девицкий, О. В.
Sysoev, I. A.
Сысоев, И. А.
Kasyanov, I. V.
Касьянов, И. В.
Nikulin, D. A.
Никулин, Д. А.
Ion-beam deposition of thin AlN films on Al2O3 substrate
description Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire
format Статья
author Devitsky, O. V.
Девицкий, О. В.
Sysoev, I. A.
Сысоев, И. А.
Kasyanov, I. V.
Касьянов, И. В.
Nikulin, D. A.
Никулин, Д. А.
author_facet Devitsky, O. V.
Девицкий, О. В.
Sysoev, I. A.
Сысоев, И. А.
Kasyanov, I. V.
Касьянов, И. В.
Nikulin, D. A.
Никулин, Д. А.
author_sort Devitsky, O. V.
title Ion-beam deposition of thin AlN films on Al2O3 substrate
title_short Ion-beam deposition of thin AlN films on Al2O3 substrate
title_full Ion-beam deposition of thin AlN films on Al2O3 substrate
title_fullStr Ion-beam deposition of thin AlN films on Al2O3 substrate
title_full_unstemmed Ion-beam deposition of thin AlN films on Al2O3 substrate
title_sort ion-beam deposition of thin aln films on al2o3 substrate
publisher MAIK NAUKA/INTERPERIODICA/SPRINGER
publishDate 2020
url http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=17&SID=E1foOAlVMmMF3jxHUZa&page=1&doc=1
https://dspace.ncfu.ru/handle/20.500.12258/11480
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