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Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes

The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of...

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Главные авторы: Altukhov, V. I., Алтухов, В. И., Sysoev, D. K., Сысоев, Д. К.
格式: Статья
语言:English
出版: IOP Publishing Ltd 2020
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在线阅读:https://dspace.ncfu.ru/handle/20.500.12258/14301
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