Photo-, cathodic- And electroluminescence-band models in solid (SiC)1-x(AIN)xluminescence centers and SiC/SiC-AIN LEDs
The paper presents models of bands (levels) in solid (SiC)1-x(AlN)x luminescence centers and n-SiC/p-(SiC)1-x(AlN)x heterostructures (light-emitting diodes). The diagram of (SiC)1-x(AlN)x energy gaps shows the positions of luminescence levels, subject to x. A SiC/SiC-AlN series of electroluminescenc...
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| Hlavní autoři: | , , , |
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| Médium: | Статья |
| Jazyk: | English |
| Vydáno: |
IOP Publishing Ltd
2021
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| On-line přístup: | https://dspace.ncfu.ru/handle/20.500.12258/15488 |
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