Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition

Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition

Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...

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書誌詳細
主要な著者:	Devitsky, O. V., Девицкий, О. В., Kravtsov, A. A., Кравцов, А. А., Sysoev, I. A., Сысоев, И. А.
フォーマット:	Статья
言語:	English
出版事項:	TVER STATE UNIV 2022
主題:	GaAs1-yBiy Thin films Pulsed laser deposition Raman light scattering Photoluminescence
オンライン･アクセス:	https://dspace.ncfu.ru/handle/20.500.12258/19149
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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