Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Статья |
| Sprache: | English |
| Veröffentlicht: |
TVER STATE UNIV
2022
|
| Schlagworte: | |
| Online Zugang: | https://dspace.ncfu.ru/handle/20.500.12258/19149 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|