Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
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| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
TVER STATE UNIV
2022
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| Aiheet: | |
| Linkit: | https://dspace.ncfu.ru/handle/20.500.12258/19149 |
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