Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
Gardado en:
| Главные авторы: | , , , , , |
|---|---|
| Formato: | Статья |
| Idioma: | English |
| Publicado: |
TVER STATE UNIV
2022
|
| Темы: | |
| Acceso en liña: | https://dspace.ncfu.ru/handle/20.500.12258/19149 |
| Метки: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|