Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
Shranjeno v:
| Главные авторы: | , , , , , |
|---|---|
| Format: | Статья |
| Jezik: | English |
| Izdano: |
TVER STATE UNIV
2022
|
| Teme: | |
| Online dostop: | https://dspace.ncfu.ru/handle/20.500.12258/19149 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|