Thin SiС and gan-based films and structures: production and properties
The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
|---|---|
| Μορφή: | Статья |
| Γλώσσα: | English |
| Έκδοση: |
Trans Tech Publications Ltd
2022
|
| Θέματα: | |
| Διαθέσιμο Online: | https://dspace.ncfu.ru/handle/20.500.12258/19425 |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|