Thin SiС and gan-based films and structures: production and properties
The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing...
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| Главные авторы: | , , , |
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| פורמט: | Статья |
| שפה: | English |
| יצא לאור: |
Trans Tech Publications Ltd
2022
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| נושאים: | |
| גישה מקוונת: | https://dspace.ncfu.ru/handle/20.500.12258/19425 |
| תגים: |
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