Thin SiС and gan-based films and structures: production and properties
The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing...
Збережено в:
| Автори: | , , , |
|---|---|
| Формат: | Статья |
| Мова: | English |
| Опубліковано: |
Trans Tech Publications Ltd
2022
|
| Предмети: | |
| Онлайн доступ: | https://dspace.ncfu.ru/handle/20.500.12258/19425 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|