Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at differ...
Сохранить в:
Главные авторы: | Devitsky, O. V., Девицкий, О. В. |
---|---|
格式: | Статья |
语言: | English |
出版: |
American Institute of Physics Inc.
2022
|
主题: | |
在线阅读: | https://dspace.ncfu.ru/handle/20.500.12258/21198 |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate
由: Devitsky, O. V., и др.
出版: (2023) -
Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
由: Devitsky, O. V., и др.
出版: (2024) -
Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
由: Devitsky, O. V., и др.
出版: (2023) -
STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
由: Devitsky, O. V., и др.
出版: (2023) -
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
由: Devitsky, O. V., и др.
出版: (2022)