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Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at differ...

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Главные авторы: Devitsky, O. V., Девицкий, О. В.
格式: Статья
语言:English
出版: American Institute of Physics Inc. 2022
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在线阅读:https://dspace.ncfu.ru/handle/20.500.12258/21198
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