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Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate

Influence of magnetron sputtering conditions on the structure and surface morphology of InxGa1–xAs thin films on a GaAs (100) substrate

We present the results of the study of the structure and surface morphology of In x Ga1–x As thin films on a GaAs substrate. Thin films were obtained by magnetron sputtering from a specially formed In 0.45 Ga 0.55 As target in an argon atmosphere. The obtained samples of thin films were studied by...

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Bibliografiska uppgifter
Huvudupphovsmän: Devitsky, O. V., Девицкий, О. В., Zakharov, A. A., Захаров, А. А., Lunin, L. S., Лунин, Л. С., Sysoev, I. A., Сысоев, И. А., Pashchenko, A. S., Пащенко, А. С., Vakalov, D. S., Вакалов, Д. С., Chapura, O. M., Чапура, О. М.
Materialtyp: Статья
Språk:Russian
Publicerad: 2023
Ämnen:
Magnetron sputtering
A 3 B 5 compounds
Thin films
Surface morphology
Raman scattering
Länkar:https://dspace.ncfu.ru/handle/20.500.12258/22295
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https://dspace.ncfu.ru/handle/20.500.12258/22295

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