Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , |
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| Μορφή: | Статья |
| Γλώσσα: | English |
| Έκδοση: |
2023
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| Θέματα: | |
| Διαθέσιμο Online: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
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