Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
Sábháilte in:
| Príomhchruthaitheoirí: | , |
|---|---|
| Formáid: | Статья |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
2023
|
| Ábhair: | |
| Rochtain ar líne: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
| Clibeanna: |
Cuir clib leis
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
|