Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
Salvato in:
Autori principali: | , |
---|---|
Natura: | Статья |
Lingua: | English |
Pubblicazione: |
2023
|
Soggetti: | |
Accesso online: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|