Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Статья |
| Langue: | English |
| Publié: |
2023
|
| Sujets: | |
| Accès en ligne: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|