STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION

STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were s...

Disgrifiad llawn

Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Prif Awduron:	Devitsky, O. V., Девицкий, О. В.
Fformat:	Статья
Iaith:	Russian
Cyhoeddwyd:	2023
Pynciau:	Diluted nitrides diluted bismuthides III-V-N-Bi GaAs1-x-yNxBiy Thin films Pulsed laser deposition
Mynediad Ar-lein:	https://dspace.ncfu.ru/handle/20.500.12258/23459
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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