STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were s...
Guardado en:
Autores principales: | , |
---|---|
Formato: | Статья |
Lenguaje: | Russian |
Publicado: |
2023
|
Materias: | |
Acceso en línea: | https://dspace.ncfu.ru/handle/20.500.12258/23459 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|