Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone
Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga1–xInxAs films by the method of zone recrystallization with a temperature gradient, the essence of...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , , , , , , , |
|---|---|
| Fformat: | Статья |
| Iaith: | English |
| Cyhoeddwyd: |
2023
|
| Pynciau: | |
| Mynediad Ar-lein: | https://dspace.ncfu.ru/handle/20.500.12258/25811 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|