Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone
Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga1–xInxAs films by the method of zone recrystallization with a temperature gradient, the essence of...
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| Päätekijät: | , , , , , , , , , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
2023
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| Aiheet: | |
| Linkit: | https://dspace.ncfu.ru/handle/20.500.12258/25811 |
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