Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone
Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga1–xInxAs films by the method of zone recrystallization with a temperature gradient, the essence of...
Salvato in:
| Autori principali: | , , , , , , , , , , , |
|---|---|
| Natura: | Статья |
| Lingua: | English |
| Pubblicazione: |
2023
|
| Soggetti: | |
| Accesso online: | https://dspace.ncfu.ru/handle/20.500.12258/25811 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|