Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone

Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga1–xInxAs films by the method of zone recrystallization with a temperature gradient, the essence of...

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Huvudupphovsmän:	Devitsky, O. V., Девицкий, О. В., Lunin, L. S., Лунин, Л. С., Mitrofanov, D. V., Митрофанов, Д. В., Sysoev, I. A., Сысоев, И. А., Nikulin, D. A., Никулин, Д. А., Chapura, O. M., Чапура, О. М.
Materialtyp:	Статья
Språk:	English
Publicerad:	2023
Ämnen:	Raman spectroscopy Thin gas band Ga1–xInxAs Temperature gradient field Atomic force microscopy III–V compounds
Länkar:	https://dspace.ncfu.ru/handle/20.500.12258/25811
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https://dspace.ncfu.ru/handle/20.500.12258/25811

Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone

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