Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone
Solid solution Ga1–xInxAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga1–xInxAs films by the method of zone recrystallization with a temperature gradient, the essence of...
Сохранить в:
| Главные авторы: | , , , , , , , , , , , |
|---|---|
| 格式: | Статья |
| 語言: | English |
| 出版: |
2023
|
| 主題: | |
| 在線閱讀: | https://dspace.ncfu.ru/handle/20.500.12258/25811 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|