Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition
GaInAsP and GaInAsSbBi solid solutions were grown on GaP (111) substrates by pulsed laser deposition using a laser fluence of 2.3 J/cm2 . Energy Dispersive X-ray microanalysis, atomic force microscopy, and Raman spectroscopy were used for analysis of the elemental composition and study of the surfac...
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| Hauptverfasser: | , , , , , |
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| Format: | Статья |
| Sprache: | English |
| Veröffentlicht: |
2023
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| Online Zugang: | https://dspace.ncfu.ru/handle/20.500.12258/25836 |
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