Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition
GaInAsP and GaInAsSbBi solid solutions were grown on GaP (111) substrates by pulsed laser deposition using a laser fluence of 2.3 J/cm2 . Energy Dispersive X-ray microanalysis, atomic force microscopy, and Raman spectroscopy were used for analysis of the elemental composition and study of the surfac...
Gorde:
Egile Nagusiak: | , , , , , |
---|---|
Formatua: | Статья |
Hizkuntza: | English |
Argitaratua: |
2023
|
Gaiak: | |
Sarrera elektronikoa: | https://dspace.ncfu.ru/handle/20.500.12258/25836 |
Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|