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Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

GaInAsP and GaInAsSbBi solid solutions were grown on GaP (111) substrates by pulsed laser deposition using a laser fluence of 2.3 J/cm2 . Energy Dispersive X-ray microanalysis, atomic force microscopy, and Raman spectroscopy were used for analysis of the elemental composition and study of the surfac...

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Detaylı Bibliyografya
Asıl Yazarlar: Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В., Lunin, L. S., Лунин, Л. С.
Materyal Türü: Статья
Dil:English
Baskı/Yayın Bilgisi: 2023
Konular:
Online Erişim:https://dspace.ncfu.ru/handle/20.500.12258/25836
Etiketler: Etiketle
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