Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...

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Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Prif Awduron:	Devitsky, O. V., Девицкий, О. В.
Fformat:	Статья
Iaith:	English
Cyhoeddwyd:	2024
Pynciau:	GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition
Mynediad Ar-lein:	https://dspace.ncfu.ru/handle/20.500.12258/26523
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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