Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...

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Opis bibliograficzny
Główni autorzy:	Devitsky, O. V., Девицкий, О. В.
Format:	Статья
Język:	English
Wydane:	2024
Hasła przedmiotowe:	GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition
Dostęp online:	https://dspace.ncfu.ru/handle/20.500.12258/26523
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

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