Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...
Сохранить в:
Главные авторы: | Devitsky, O. V., Девицкий, О. В. |
---|---|
Формат: | Статья |
Язык: | English |
Опубликовано: |
2024
|
Темы: | |
Online-ссылка: | https://dspace.ncfu.ru/handle/20.500.12258/26523 |
Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|
Схожие документы
-
STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
Автор: Devitsky, O. V., и др.
Опубликовано: (2023) -
EFFECT OF BISMUTH CONTENT ON THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GaAs1-yBiy: FIRST PRINCIPLES CALCULATIONS
Автор: Devitsky, O. V., и др.
Опубликовано: (2024) -
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Автор: Devitsky, O. V., и др.
Опубликовано: (2022) -
Extreme environment wideband, high-efficiency photovoltaics based on new physical principles and hyperfast LPE GaAs power electronics
Автор: Saytiev, A. B., и др.
Опубликовано: (2019) -
Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone
Автор: Devitsky, O. V., и др.
Опубликовано: (2023)