Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...
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פריטים דומים
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Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
מאת: Tarala, V. A., и др.
יצא לאור: (2018) -
Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
מאת: Ambartsumov, M. G., и др.
יצא לאור: (2021)